2D materials beyond the limit of 3D bulk semiconductors
2D semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable interest in the quest to overcome some of the challenges associated with 3D bulk semiconductors.[1,2] To substitute transistor-based electronics that use 3D bulk semiconductors with 2D semiconductor materials, various aspects of the development processes (e.g., wafer-scale synthesis, dielectric materials suitable for 2D materials, patterning techniques, etc.) should be considered. Here, a facile strategy for synthesizing large-area 2D materials and controlling their properties to achieve high-performance electronic devices based on 2D semiconductors via liquid precursor-mediated chemical vapor deposition (CVD) is presented.
We demonstrate the synthesis of various 2D materials, including TMDs, ionic crystals, and high entropy materials, by manipulating the composition of the liquid precursor. Through the incorporation of additives and dopants into the liquid precursor, we successfully achieved both large-area thin-film growth and precise control of doping concentrations. Furthermore, by depositing a liquid-phase transition metal precursor on a pre-patterned Ni/SiO2 substrate with sacrificial metal layers, patternable TMDs can be grown directly on SiO2 through intergranular diffusion process, enabling the fabrication of TMDs-based electronic devices with promising functionalities.
